to-220 parameter symbol value unit collector-base voltage v cbo 200 v collector-emitter voltage v ceo 150 v emitter-base voltage v ebo 5 v collector current i c 2.0 a collector peak current i c(peak) 3.0 a total dissipation at p tot 30 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c 2sb546a / 2SD401A description parameter symbol test conditions min. typ. max. unit collector cutoff current i cbo v cb =150v, i e =0 50 ua emitter cut-off current i ebo v eb =4.0v, i c =0 50 ua collector-emitter sustaining voltage v ceo i c =10ma, i b =0 150 v dc current gain h fe(1) v ce =10v, i c =400ma 40 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =50ma 2.0 v collector capacitance c c v cb =10v,f=1.0mhz, i e =0 75/45 pf transition frequency f t v ce =10v,i c =400ma 7.0 mhz complementary silicon power ttransistors product specification the 2sb546a and 2SD401A are high voltage triple diffused silicon transistors, these devices are designed for use in line-operated color tv vertical defiection of complementary symmetry circuit, the 2sb546a and 2SD401A are complementary transistors, consisting of straight leads electrical characteristicst semiconductor co., ltd absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd tiger electronic co.,ltd
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